FF11MR12W1M1B70BPSA1

FET, MOSFET Arrays Overview

The FF11MR12W1M1B70BPSA1 is a dual N-channel CoolSiC MOSFET module from Infineon Technologies, housed in the EasyDUAL package. It features a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 100 A at 25°C. The typical on-resistance is 11 mΩ. Gate-source voltage limits are -10 V to +20 V, with a threshold voltage of 3.5 V. Operating temperature ranges from -40°C to +150°C. Key switching parameters include a turn-on delay of 25.1 ns, fall time of 28 ns, turn-off delay of 64.3 ns, and rise time of 16.5 ns. The integrated diode has a forward voltage of 1.5 V and a forward current of 89 A.

FET, MOSFET Arrays Feature Summary

• Utilizes CoolSiC Trench technology for enhanced switching performance and reliability.
• Incorporates high-performance aluminum nitride (AlN) ceramic substrate to reduce junction-to-heatsink thermal resistance by up to 40% compared to standard materials.
• Designed with press-fit installation style for robust mechanical connection and simplified assembly.

FET, MOSFET Arrays Applications

• Solar inverters
• Uninterruptible power supplies (UPS)
• Auxiliary inverters
• Energy storage systems
• High-power DC-DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix B70 against official datasheets to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status through manufacturer documentation. Ensure thermal interface material selection aligns with the press-fit mounting requirements and the reduced thermal resistance characteristics provided by the AlN substrate.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high power density and efficient thermal management. The combination of low on-resistance and superior heat dissipation via the AlN substrate supports higher output power or lower junction temperatures. Verify that the gate drive voltage range accommodates the specified -10 V to +20 V limits for reliable operation.

FET, MOSFET Arrays Part Context

This module belongs to the EasyDUAL CoolSiC family, which integrates advanced silicon carbide MOSFETs into a compact power module. The series is engineered for high-efficiency power conversion, leveraging trench gate technology to minimize switching losses while maintaining high blocking voltage capabilities suitable for industrial and renewable energy systems.

FET, MOSFET Arrays Replacement Considerations

FF11MR12W1M1HB70BPSA1

FET, MOSFET Arrays FAQ

What is the primary advantage of the AlN ceramic substrate in this module?

The aluminum nitride substrate offers higher thermal conductivity than traditional materials, reducing junction-to-heatsink thermal resistance by up to 40%, which allows for higher power output or extended system life.

Is this module suitable for press-fit mounting?

Yes, the FF11MR12W1M1B70BPSA1 is designed specifically for press-fit installation, ensuring secure mechanical connections without soldering.