ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
FF11MR12W1M1PB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V AG-EASY1B. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF11MR12W1M1PB11BPSA1
- Description：MOSFET 2N-CH 1200V AG-EASY1B
- Series：EasyDUAL™
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：100A (Tj)
- Rds On (Max) @ Id, Vgs：11.3mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id：5.55V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs：248nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：7360pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-EASY1B-2
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF11MR12W1M1PB11BPSA1
FET, MOSFET Arrays Overview
The FF11MR12W1M1PB11BPSA1 is a CoolSiC dual N-channel MOSFET module from Infineon Technologies. It features a 1200V drain-source voltage and 100A continuous drain current. The device has a typical on-resistance of 11mOhms and operates within a temperature range of -40°C to +150°C. Gate-source voltage limits are -10V to +20V, with a threshold voltage of 3.5V. Switching times include a rise time of 16.5ns and fall time of 28ns. It utilizes press-fit installation in a module package.
FET, MOSFET Arrays Feature Summary
- Utilizes Silicon Carbide (SiC) technology for high-performance switching
- Integrates dual N-channel MOSFETs in a single module configuration
- Employs press-fit contact technology for secure mounting
FET, MOSFET Arrays Applications
- High-frequency power conversion systems
- Industrial motor drives
- Renewable energy inverters
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix PB11 against official Infineon documentation to confirm pinout and thermal interface specifications. Ensure compatibility with existing gate driver circuits regarding the specified voltage limits. Confirm availability status as distribution channels may vary. Cross-reference the datasheet revision date to ensure alignment with current manufacturing standards.
FET, MOSFET Arrays Selection Notes
Select this component when high efficiency and compact size are required for 1200V applications. The low on-resistance supports reduced conduction losses. Verify that the system design accommodates the specific switching characteristics and thermal management needs associated with SiC modules. Ensure the PCB or chassis layout supports the press-fit mechanical requirements.
FET, MOSFET Arrays Part Context
This module belongs to the CoolSiC EasyDUAL family, designed for high-power density applications. It represents Infineon's integration of silicon carbide technology into standardized module formats. The series targets demanding environments requiring robust performance and reliability under high voltage and current conditions.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon substitution guides for compatible alternatives. Verify electrical parameters and thermal characteristics match before swapping. Generic equivalents may not provide identical switching performance.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
