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The FF11MR12W2M1HB70BPSA1 is a CoolSiC Trench MOSFET module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC drain current of 75 A at 175 °C junction temperature. The typical on-resistance is 10.8 mΩ at 25 °C. The module utilizes an AlN substrate for low thermal resistance and incorporates PressFIT contact technology with integrated mounting clamps. An internal NTC thermistor provides temperature monitoring, rated at 5 kΩ at 25 °C.
Verify component authenticity by checking the Data Matrix barcode against Infineon standards. Confirm the revision history matches the latest datasheet version to ensure accurate electrical parameters. Ensure the ordering suffix aligns with specific packaging or testing requirements before finalizing procurement orders.
Select this module for designs requiring high switching frequencies and low conduction losses. Verify that the gate drive voltages remain within the recommended range of -5 to 0 V off-state and 15 to 18 V on-state. Ensure the thermal management system can handle the specified thermal resistance values under maximum load conditions.
This component belongs to the Infineon CoolSiC™ Trench MOSFET family. It is part of the EasyPACK™ series designed for industrial applications. The module integrates advanced silicon carbide technology to improve efficiency in power conversion systems compared to traditional silicon-based alternatives.
Direct replacements must match the 1200 V rating, 75 A current capacity, and EasyPACK™ form factor. Verify compatibility with existing PCB footprints and cooling solutions. Check if alternative modules offer similar thermal resistance and switching characteristics for seamless integration.