ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MODULE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 150A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-62MM
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：225 A
- Power - Max：1250 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：11 nF @ 25 V
Download product information
Overview
The FF150R12KE3B8BDLA1 is a half-bridge IGBT module from Infineon Technologies, rated at 1200V and 225A. It features a chassis mount configuration with a power dissipation of 1250W. The device operates within a junction temperature range of -40°C to +125°C. Designed for high-performance switching applications, it utilizes Trenchstop technology to ensure robust performance in demanding power electronics environments.
Feature Summary
- Half-bridge topology for efficient power conversion
- Chassis mount design for secure mechanical integration
- Trenchstop technology for optimized switching characteristics
Applications
- High-performance industrial motor drives
- Power supply units requiring robust switching
- Inverter systems in renewable energy applications
Procurement Notes
Verify the exact datasheet specifications against the official Infineon documentation before integration. Confirm that the chassis mounting requirements align with your thermal management system. Ensure compatibility with gate drive circuits for the specified voltage levels. Cross-reference the part number suffixes to confirm package and pinout consistency with your design.
Selection Notes
Select this component when a half-bridge configuration is required for 1200V applications. Consider its 225A rating for medium-to-high current loads. Evaluate the 1250W power dissipation capability against your thermal constraints. The chassis mount style necessitates specific cooling solutions compared to PCB-mounted alternatives.
Part Context
This module belongs to Infineon's IGBT module portfolio, leveraging Trenchstop technology for improved efficiency. It is designed for applications demanding reliable switching in harsh environments. The half-bridge structure simplifies circuit design for single-phase or three-phase inverter legs.
Replacement Considerations
Consult official Infineon substitution guides for verified replacements. Generic equivalents may not match the specific thermal or electrical characteristics. Verify pinout compatibility if substituting within the same series.
