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Product Detailed Parameters
- Description：LOW POWER ECONO AG-ECONO2B-311
- Series：*
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FF150R12KE3B8BPSA1 is a dual IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT3 technology. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 150 A at 25°C. The typical collector-emitter saturation voltage is 1.7 V, with a gate-emitter leakage current of 400 nA. Power dissipation is rated at 780 W. Operating temperatures range from -40°C to +125°C. The module uses screw mount installation and comes in a 62 mm tray package.
Feature Summary
- Integrates Trench/Fieldstop IGBT3 technology for optimized switching performance
- Designed as a dual configuration within a compact 62 mm form factor
- Supports industrial applications through robust thermal management capabilities
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix B8 against official datasheets to confirm exact manufacturing lot or regional compliance variations. Confirm availability status directly with authorized distributors as supply chain conditions fluctuate. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before procurement.
Selection Notes
Select this component for designs requiring 1.2 kV blocking capability with 150 A continuous current handling. Compare the 1.7 V saturation voltage against alternative modules to evaluate conduction losses. Verify that the +125°C maximum junction temperature aligns with the system's thermal design constraints and cooling infrastructure requirements.
Part Context
This part belongs to the EconoPAC series of IGBT modules, specifically leveraging the IGBT3 generation. It serves as a discrete power semiconductor solution for medium-power conversion tasks. The module integrates anti-parallel diodes within its dual structure, facilitating half-bridge configurations commonly used in inverters and rectifiers.
Replacement Considerations
Direct replacements include the FF150R12KE3G and FF150R12KE3GHOSA1. These variants share identical electrical characteristics and pinouts. Verify mechanical dimensions and thermal resistance values to ensure interchangeability without modifying the printed circuit board layout.
