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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF150R12KE3GB2HOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT3 technology and an Emitter Controlled High Efficiency diode. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 150 A at TC = 80°C. The module operates within a junction temperature range of -40°C to 125°C. Key electrical parameters include a typical collector-emitter saturation voltage (VCE sat) of 1.70 V at Tvj = 25°C and a forward voltage (VF) of 1.65 V for the integrated diode. Total power dissipation is rated at 780 W.
Verify the exact ordering suffix B2HOSA1 against official Infineon documentation to confirm specific manufacturing or compliance attributes. Ensure compatibility with standard EconoPACK mounting requirements and thermal interface materials during integration.
Select this component for high-power inverter designs requiring robust short-circuit withstand capability and efficient thermal management. Evaluate the 1200V rating and 150A current capacity against system load requirements and operating temperature constraints.
This part belongs to the Infineon EconoPACK family, specifically designed for industrial power conversion. It represents the Trenchstop IGBT3 generation, balancing switching losses and conduction drops for medium-frequency applications.
Consult official Infineon cross-reference guides for verified substitutes. Consider modules with similar voltage ratings and packaging dimensions if direct replacement is required.
The maximum repetitive peak collector current (ICRM) is 300 A for a pulse duration of 1 ms.
Yes, the module includes an internal gate resistor (RGint) with a typical value of 5.0 Ω.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.