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The FF150R12KE3GHOSA1 is a dual IGBT module from Infineon's Trench/Fieldstop IGBT3 series, housed in a 62mm C-series package. It integrates an Emitter Controlled High Efficiency diode. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 150 A at TC=80°C. The typical collector-emitter saturation voltage (VCE sat) is 1.70 V at Tvj=25°C. Total power dissipation is rated at 780 W. Thermal resistance from junction to case is 0.16 K/W for the IGBT and 0.30 K/W for the diode.
Verify the specific suffix GHOSA1 against official documentation to confirm any unique material or compliance variations compared to the standard FF150R12KE3G. Ensure sourcing channels provide valid traceability certificates and original manufacturer packaging to prevent counterfeit components. Cross-reference datasheet revision 3.2 for accurate technical specifications during procurement validation.
Select this component for applications requiring robust 1200V blocking capability and 150A continuous current handling. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Confirm that the operating temperature range of -40°C to 125°C aligns with the environmental conditions of the target system design.
This module belongs to Infineon's IGBT3 product family, representing a generation of trench field-stop technology designed for improved efficiency over previous iterations. The 62mm form factor is a standard industry footprint used across various medium-power industrial modules, facilitating standardized mechanical design and heatsinking solutions for power electronics engineers.
Direct functional equivalents may include other 1200V 150A IGBT modules in the 62mm package format. Verify pinout compatibility and thermal characteristics before substitution. Consult official replacement guides for updated technologies such as IGBT4 or IGBT7 series if enhanced performance metrics are required.