FF150R12ME3GBOSA1

Overview

The FF150R12ME3GBOSA1 is a dual IGBT module from Infineon Technologies, belonging to the Trench/Fieldstop IGBT3 - E3 series. It features a collector-emitter maximum voltage (VCEO) of 1.7 kV and a continuous collector current of 240 A at 25°C. The typical collector-emitter saturation voltage is 2 V, with a gate-emitter leakage current of 400 nA. Power dissipation (Pd) is rated at 1.05 kW. The device operates within a temperature range of -40°C to +125°C and utilizes an EconoD package with screw mount installation.

Feature Summary

• High voltage capability suitable for demanding power applications
• Integrated thermal monitoring via NTC thermistor
• Robust industrial qualification for reliable operation

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Induction heating systems

Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance status and check for end-of-life notifications prior to procurement. Ensure storage conditions meet specified humidity sensitivity levels to maintain device integrity during handling and assembly processes.

Selection Notes

Select this module for high-voltage applications requiring robust switching performance. Verify thermal management requirements against the 1.05 kW dissipation rating. Ensure mechanical compatibility with the EconoD package dimensions and screw mounting style for proper integration into the target system design.

Part Context

This part belongs to the Infineon IGBT3 family, utilizing trench field-stop technology for optimized switching characteristics. It is designed for industrial applications where reliability under high stress is critical. The module integrates fast recovery anti-parallel diodes for efficient half-bridge configurations in power conversion circuits.

Replacement Considerations

FF150R17ME3G