FF17MR12W1M1HB17BPSA1

FET, MOSFET Arrays Overview

The FF17MR12W1M1HB17BPSA1 is a CoolSiC™ MOSFET booster module manufactured by Infineon Technologies. It utilizes Silicon Carbide (SiC) technology and features an N-Channel configuration within a dual setup. The device has a drain-source breakdown voltage of 1.2 kV and a continuous drain current rating of 50 A. Its on-resistance is specified at 16.2 mOhms, with a gate-source voltage range of -7 V to +20 V. The threshold voltage is 5.15 V. Operating temperatures span from -40°C to +175°C. The module employs a press-fit installation style in the AG-EASY1B package, measuring 48 mm x 33.8 mm x 12 mm.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Carbide (SiC) semiconductor technology for high-performance power switching.
• Features a dual N-Channel configuration designed for booster applications.
• Supports press-fit mounting for secure mechanical connection.
• Operates reliably across a wide temperature range up to 175°C.

FET, MOSFET Arrays Applications

• Industrial motor drives
• Uninterruptible Power Supplies (UPS)
• Solar inverters

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including the suffix BPSA1 to ensure correct component identification. Confirm that the required documentation matches the specific manufacturing batch. Check RoHS compliance status through official manufacturer channels before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this module when a 1.2 kV SiC solution is required for high-efficiency switching. Ensure the design accommodates the 50 A continuous current capability and the specific thermal management needs associated with the EASY1B package dimensions and press-fit interface requirements.

FET, MOSFET Arrays Part Context

This component belongs to the CoolSiC™ MOSFET family, specifically utilizing the M1H generation technology. It is part of the EasyDUAL series, which integrates two switches in a single compact module. The product line focuses on reducing system size and improving efficiency in power conversion applications compared to traditional silicon devices.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package compatibility to ensure functional equivalence without redesigning the host circuitry.