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The FF1800XTR17T2P5BPSA1 is an XHP™2 IGBT module featuring Trench/Fieldstop IGBT5 technology and emitter-controlled diodes. It provides a collector-emitter voltage of 1700 V, nominal current of 1800 A, and peak current of 3600 A. The saturation voltage is 1.8 V at 25°C. Operating junction temperature reaches 175°C with thermal resistance of 20.6 K/kW for the IGBT and 39.1 K/kW for the diode. An integrated NTC thermistor has a rated resistance of 5 kΩ at 25°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with RoHS directives and check for REACH SVHC status prior to integration into final assemblies.
Select this module for high-current industrial applications requiring robust thermal management. Evaluate the 175°C operating limit against system cooling requirements. Consider the low stray inductance and fast switching characteristics when designing gate drive circuits and PCB layouts for optimal performance.
This component belongs to the XHP™2 series from Infineon Technologies. It utilizes advanced Trench/Fieldstop IGBT5 technology combined with emitter-controlled diodes. The package is designed for high power density and features a copper baseplate with high comparative tracking index insulation.
Consult official Infineon documentation for qualified replacement part numbers. Verify compatibility regarding pinout configuration, thermal resistance values, and mechanical mounting dimensions before substituting components in existing designs.