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FF1MR12KM1HP is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF1MR12KM1HP
- Description：MOSFET
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF1MR12KM1HP
FET, MOSFET Arrays Overview
The FF1MR12KM1HP is a CoolSiC™ MOSFET half-bridge module manufactured by Infineon Technologies. It utilizes Silicon Carbide (SiC) technology and features a 62 mm package with dimensions of 106.4 mm in length, 61.4 mm in width, and 30.5 mm in height. The device supports screw mounting and operates within an industrial quality grade. Key electrical specifications include a drain-source breakdown voltage of 1.2 kV, a continuous drain current of 395 A, and a typical on-resistance of 1.5 mΩ at 25°C. The gate-source voltage range spans from -10 V to +23 V, with a threshold voltage of 4.3 V. Forward current capability is rated at 180 A, and the forward voltage is typically 4.22 V. Operating temperatures range from -40°C to +175°C.
FET, MOSFET Arrays Feature Summary
- Utilizes CoolSiC™ trench MOSFET technology for high-efficiency power conversion.
- Integrated thermal interface material (TIM) for optimized heat dissipation.
- Industrial quality grade certification ensuring reliability under rigorous testing standards.
FET, MOSFET Arrays Applications
- Uninterruptible Power Supply (UPS) systems
- Energy Storage Systems (ESS)
- Solar inverters
- Electric Vehicle (EV) chargers
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix 'HP' against official Infineon documentation to confirm exact pinout and terminal configuration. Ensure compatibility with existing cooling solutions given the 62 mm form factor. Cross-reference the datasheet revision date to validate parameter accuracy before integration into final designs.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring high-frequency switching and reduced thermal management complexity due to integrated TIM. Compare the 1.5 mΩ on-resistance against system loss requirements. Confirm that the 1.2 kV voltage rating aligns with the DC bus voltage of the target application circuit.
FET, MOSFET Arrays Part Context
This module belongs to the CoolSiC™ MOSFET M1H family, designed for medium-power applications. It shares the standard 62 mm mechanical footprint with other variants in the series, facilitating board layout reuse across different current ratings within the same product line.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon substitution guides for direct replacements. Verify that alternative modules maintain identical thermal interface material specifications and mechanical mounting hole patterns to ensure seamless integration without redesigning the heatsink assembly.
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