FF2000UXTR33T2M1BPSA1

FET, MOSFET Arrays Overview

The FF2000UXTR33T2M1BPSA1 is a high-power CoolSiC MOSFET module from Infineon Technologies, utilizing the XHP 2 package and .XT interconnection technology. It features a 3.3 kV drain-source breakdown voltage (Vds) and a continuous drain current (Id) of 2000 A. The device exhibits a typical on-resistance (Rds(on)) of 4.8 mOhms. Gate-source voltage limits are specified at -7 V to +20 V, with a threshold voltage (Vgs(th)) of 4.3 V. Switching characteristics include a turn-on delay of 60 ns, turn-off delay of 125 ns, rise time of 60 ns, and fall time of 125 ns. The module is designed for screw mounting and operates within a junction temperature range up to 175°C.

FET, MOSFET Arrays Feature Summary

• Utilizes newly developed 3.3 kV CoolSiC MOSFETs integrated with Infineon's .XT interconnection technology for enhanced reliability and power density.
• Features low switching losses and high current density, enabling higher switching frequencies suitable for demanding traction applications.
• Incorporates an integrated body diode and NTC thermistor for comprehensive thermal monitoring and protection.
• Designed with a robust XHP 2 package structure that provides high creepage distance, electrical clearance, and I2t surge current robustness.

FET, MOSFET Arrays Applications

• Railway traction inverters for electrified trains
• Centralized traction converters
• High-power industrial motor drives
• DC/DC converters for energy storage systems

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix BPSA1 against the official datasheet to confirm exact ordering details, as suffixes may denote specific packaging or testing variations. Ensure compatibility with existing gate driver requirements given the 3.3 kV rating. Confirm availability through authorized distributors, as supply status can vary. Check for any export control restrictions associated with the component origin before procurement.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high power density and efficiency in harsh environments, such as rail traction. Compare the 3.3 kV rating and 2000 A current capacity against system voltage and load requirements. Evaluate the thermal management needs based on the 175°C maximum junction temperature. Consider the mechanical constraints of the XHP 2 package and screw mounting style during PCB or chassis design.

FET, MOSFET Arrays Part Context

This component belongs to Infineon’s CoolSiC XHP 2 portfolio, specifically tailored for high-power traction applications. It represents a shift towards silicon carbide technology to replace traditional silicon modules, offering superior performance in terms of switching speed and thermal stability. The XHP 2 package is designed to meet the rigorous lifetime and quality standards required for railway and industrial infrastructure.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature for this module?

The maximum operating junction temperature is 175°C.

Does the module include an integrated temperature sensor?

Yes, the module includes an integrated NTC thermistor for thermal monitoring.

What interconnection technology is used in the XHP 2 package?

The module utilizes Infineon's .XT interconnection technology to ensure long service life and reliable fast switching.