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The FF200R12KE3HOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3 technology. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC) of 295 A at 25°C. The module has a total power dissipation of 1050 W and an internal gate resistance of 3.8 Ω. Operating temperatures range from -40°C to 125°C. Key electrical parameters include a saturation voltage of 2.15 V max at 200A/125°C, turn-on energy loss of 15 mJ, and turn-off energy loss of 35 mJ at 200A/600V.
Verify the specific ordering suffix HOSA1 against official Infineon documentation to confirm compliance with RoHS standards and lead time requirements. Ensure that the procurement channel provides valid traceability certificates matching the datasheet revision 3.1 specifications.
Select this module for applications requiring high current density and reliable thermal cycling performance. Evaluate the 0.12 K/W junction-to-case thermal resistance against your heatsink capabilities. Confirm that the drive circuit can handle the 14 nF input capacitance and 1.9 µC gate charge for efficient switching control.
This component belongs to the EconoPACK 3 series, designed for compact power conversion solutions. It represents the third generation of Trenchstop technology, balancing efficiency and ruggedness for industrial inverter applications where space constraints and thermal reliability are critical design factors.
Direct replacements within the same package and rating family include the FF200R12KE3 standard version. Verify pinout compatibility and thermal interface requirements when substituting with other Infineon IGBT modules of similar voltage and current ratings.
The maximum repetitive peak collector current (ICRM) is 400 A for a pulse duration of 1 ms.
The module supports an isolation test voltage (VISOL) of 2.5 kV RMS at 50 Hz for 1 minute.
The module can withstand a short-circuit current of 800 A for a maximum duration of 10 µs at a junction temperature of 125°C.