FF200R12KE3HOSA1

FF200R12KE3HOSA1

$93.33
  • Description:MEDIUM POWER 62MM
  • Series:*

SKU:7a456048bc26 Category: Brand:

  
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Product Detailed Parameters

  • Description:MEDIUM POWER 62MM
  • Series:*
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:-
  • Configuration:-
  • Vce(on) (Max) @ Vge, Ic:-
  • Input:-
  • NTC Thermistor:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Power - Max:-
  • Current - Collector Cutoff (Max):-
  • Input Capacitance (Cies) @ Vce:-

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FF200R12KE3HOSA1

Overview

The FF200R12KE3HOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3 technology. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC) of 295 A at 25°C. The module has a total power dissipation of 1050 W and an internal gate resistance of 3.8 Ω. Operating temperatures range from -40°C to 125°C. Key electrical parameters include a saturation voltage of 2.15 V max at 200A/125°C, turn-on energy loss of 15 mJ, and turn-off energy loss of 35 mJ at 200A/600V.

Feature Summary

  • Integrates Trenchstop IGBT3 technology for optimized switching performance and low conduction losses.
  • Features a robust copper baseplate design with Al2O3 internal insulation for effective thermal management and high isolation voltage.
  • Includes built-in NTC thermistor for precise junction temperature monitoring and system protection.

Applications

  • Industrial motor drives
  • Uninterruptible Power Supplies (UPS)
  • Induction heating systems

Procurement Notes

Verify the specific ordering suffix HOSA1 against official Infineon documentation to confirm compliance with RoHS standards and lead time requirements. Ensure that the procurement channel provides valid traceability certificates matching the datasheet revision 3.1 specifications.

Selection Notes

Select this module for applications requiring high current density and reliable thermal cycling performance. Evaluate the 0.12 K/W junction-to-case thermal resistance against your heatsink capabilities. Confirm that the drive circuit can handle the 14 nF input capacitance and 1.9 µC gate charge for efficient switching control.

Part Context

This component belongs to the EconoPACK 3 series, designed for compact power conversion solutions. It represents the third generation of Trenchstop technology, balancing efficiency and ruggedness for industrial inverter applications where space constraints and thermal reliability are critical design factors.

Replacement Considerations

Direct replacements within the same package and rating family include the FF200R12KE3 standard version. Verify pinout compatibility and thermal interface requirements when substituting with other Infineon IGBT modules of similar voltage and current ratings.

FAQ

What is the maximum repetitive peak collector current?

The maximum repetitive peak collector current (ICRM) is 400 A for a pulse duration of 1 ms.

What is the isolation test voltage of the module?

The module supports an isolation test voltage (VISOL) of 2.5 kV RMS at 50 Hz for 1 minute.

What is the typical short-circuit withstand time?

The module can withstand a short-circuit current of 800 A for a maximum duration of 10 µs at a junction temperature of 125°C.

FF200R12KE3HOSA1FF200R12KE3HOSA1
$93.33
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