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Product Detailed Parameters
- Description：IGBT MOD 1200V 240A 1100W
- Series：C
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：240 A
- Power - Max：1100 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The FF200R12KE4HOSA1 is a 62mm C-series IGBT module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It provides a collector-emitter voltage of 1200 V, with continuous DC collector currents rated at 200 A (TC=100°C) and 240 A (TC=25°C). The module supports repetitive peak currents up to 400 A and total power dissipation of 1100 W. Key electrical parameters include a maximum VCE(sat) of 2.15 V at 200 A and 150°C, gate charge of 1.80 µC, and input capacitance of 14.0 nF. Thermal resistance from junction to case is 0.135 K/W for the IGBT and 0.20 K/W for the diode.
Feature Summary
- Incorporates Trench/Fieldstop IGBT4 technology for optimized switching performance.
- Features an integrated Emitter Controlled Diode for low reverse recovery losses.
- Designed in a robust 62mm flange mount package for high current density.
- Includes internal isolation using Al2O3 ceramic substrate.
Applications
- Industrial motor drives
- Uninterruptible Power Supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific HOSA1 suffix against official Infineon documentation to confirm exact manufacturing lot or packaging variations. Ensure compatibility with standard 62mm mounting hardware and thermal interface materials specified in the application notes. Cross-reference datasheet revision 3.0 for accurate parameter limits.
Selection Notes
Select this module for applications requiring high short-circuit withstand capability and low conduction losses. Evaluate thermal management requirements based on the 0.135 K/W junction-to-case resistance. Confirm that the operating temperature range of -40°C to 150°C aligns with the system's environmental constraints.
Part Context
This component belongs to the Infineon 62mm C-series family, which utilizes advanced IGBT4 chip technology. It is part of the broader FF200R12 product line designed for medium-power industrial applications. The series emphasizes reliability and efficiency through optimized emitter control and trench gate structures.
Replacement Considerations
Direct replacements within the same series include FF200R12KE4P or FF200R12KE4PHOSA1. Verify pinout compatibility and thermal characteristics before substitution. Consult official cross-reference lists for updated generations like KS4 series if improved switching speeds are required.
FAQ
What is the maximum short-circuit time for this module?
The module supports a short-circuit time of up to 10 µs under specified conditions (VGE ≤ 15 V, VCC = 800 V).
Does the module include an NTC thermistor?
No, the FF200R12KE4HOSA1 does not include an integrated NTC thermistor.
What is the recommended mounting torque for M6 screws?
The recommended mounting torque for the module base plate is between 3.00 and 6.00 Nm.
