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Product Detailed Parameters
- Description：IGBT MOD 1200V 320A 1100W
- Series：C
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：320 A
- Power - Max：1100 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The FF200R12KT4HOSA1 is a dual IGBT module from Infineon's Trench/Fieldstop IGBT4 series, designed for inverter applications. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC) of 320 A at 25°C. The module incorporates an optimized Emitter Controlled Diode with a forward voltage (VF) of 2.15 V max at 150°C. Key electrical parameters include a total power dissipation of 1100 W, gate-emitter peak voltage of +/-20 V, and repetitive peak collector current of 400 A. Thermal resistance from junction to case is 0.135 K/W per IGBT.
Feature Summary
- Utilizes fast Trench/Fieldstop IGBT4 technology combined with an optimized Emitter Controlled Diode for efficient switching performance.
- Features a robust copper baseplate construction providing high thermal conductivity and mechanical stability.
- Designed with internal basic insulation using Al2O3 to meet safety class 1 requirements.
Applications
- Inverter systems
- Industrial motor drives
- Uninterruptible Power Supply (UPS)
- Commercial and agricultural vehicles
Procurement Notes
Verify the specific ordering suffix HOSA1 against official Infineon documentation to confirm compliance with RoHS directives and Halogen-free status. Ensure that the procurement channel provides valid traceability certificates matching the manufacturer's batch records. Cross-reference the part number with the latest datasheet revision to confirm technical specifications have not changed.
Selection Notes
Select this module for applications requiring high current density and low conduction losses within a 62mm C-series footprint. Evaluate the thermal resistance values and stray inductance to ensure compatibility with the intended heatsink design and circuit layout. Confirm that the operating temperature range of -40°C to 150°C aligns with the environmental conditions of the target system.
Part Context
This component belongs to the Infineon 62mm C-series module family, which standardizes dimensions for easy integration into various power electronic platforms. The FF200R12KT4 variant specifically targets high-power inverter designs, offering a balance between voltage rating and current handling capability typical of the IGBT4 generation.
Replacement Considerations
Direct replacements within the same series include FF200R12KE4 or FF200R12KS4, though these may differ in current ratings or diode characteristics. Verify pinout compatibility and thermal interface requirements before substitution. Consult Infineon for updated alternatives if the KT4 series is discontinued.
FAQ
What is the maximum repetitive peak collector current for this module?
The maximum repetitive peak collector current (ICRM) is 400 A with a pulse width of 1 ms.
Does the module include an integrated NTC thermistor?
No, the FF200R12KT4HOSA1 does not include an integrated NTC thermistor.
What is the isolation test voltage of the module?
The isolation test voltage (VISOL) is 4.0 kV RMS at 50 Hz for 1 minute.
