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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF200R12W2T7EB11BPSA1 is a dual IGBT module from Infineon Technologies, utilizing Trenchstop™ IGBT7 technology. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 165 A at 25°C. The typical collector-emitter saturation voltage is 1.5 V, with a gate-emitter leakage current of 100 nA. The device operates within a temperature range of -40°C to +175°C and has a maximum gate-emitter voltage of 20 V. It employs press-fit mounting in a tray package.
Verify the complete part number including all suffixes against official manufacturer documentation to ensure correct technical specifications. Confirm that the required datasheet version matches the specific batch requirements. Cross-reference the component code with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Select this component based on its 1.2 kV blocking capability and 165 A current rating suitable for high-power applications. Ensure the thermal management design accommodates the specified operating temperature limits up to 175°C. Verify that the system architecture supports the dual configuration topology provided by this specific module variant.
This module belongs to Infineon's Easy Standard series, which provides standardized form factors for industrial power electronics. The Trenchstop™ IGBT7 generation offers improved efficiency compared to previous iterations. It serves as a discrete power solution for medium to high-power conversion tasks requiring robust voltage handling.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing existing components in established designs.