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The FF225R12ME4PB11BPSA1 is a dual IGBT module from Infineon's EconoDUAL™3 series, utilizing Trench/Fieldstop IGBT4 technology. It features a 1200 V collector-emitter voltage (VCES) and a continuous DC collector current of 225 A at 70 °C baseplate temperature. The typical saturation voltage is 1.85 V at 25 °C. Integrated components include an emitter-controlled HE diode and an NTC thermistor with a rated resistance of 5 kΩ at 25 °C. The module employs PressFIT mounting and includes pre-applied thermal interface material.
Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure compatibility with recommended gate drivers listed in the manufacturer's guide. Confirm that the application environment meets the industrial qualification standards defined by IEC 60747, 60749, and 60068 before deployment.
Select this component for applications requiring high power density and robust thermal management. The integrated NTC allows for precise junction temperature monitoring. Verify that the system design accommodates the specific stray inductance and mounting torque requirements specified in the datasheet to ensure optimal performance and longevity.
This module belongs to the Infineon EconoDUAL™3 family, designed for medium to high-power industrial applications. It represents the Trench/Fieldstop IGBT4 generation, offering improved switching characteristics compared to previous iterations. The standard housing facilitates integration into various power electronic systems.
Consult official substitution lists for compatible modules within the same voltage and current ratings. Verify pinout compatibility and thermal resistance values when considering alternative part numbers.