FF225R65T3E3BPSA1

$1,352.52

Description：IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Series：XHP™3

SKU:d92065b6a6a1 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Series：XHP™3
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：2 Independent
Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 225A
Input：Standard
NTC Thermistor：No
Operating Temperature：125°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-XHP3K65
Voltage - Collector Emitter Breakdown (Max)：5900 V
Current - Collector (Ic) (Max)：225 A
Power - Max：1000000 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：65.6 nF @ 25 V

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FF225R65T3E3BPSA1

Overview

The FF225R65T3E3BPSA1 is an XHP™3 IGBT module featuring Trench/Fieldstop IGBT3 and emitter-controlled diodes. It provides a collector-emitter voltage (VCES) of 6500 V and a continuous DC collector current (ICDC) of 225 A at TC = 80 °C. The repetitive peak collector current (ICRM) reaches 450 A. The module utilizes an AlSiC base plate for enhanced thermal cycling capability and offers high dynamic robustness with low saturation voltage. It includes enhanced insulation rated at 10.4 kV AC for 60 seconds and meets the R23 (HL3) fire protection classification.

Feature Summary

High-voltage insulation with 10.4 kV AC rating and CTI > 600
AlSiC base plate for increased thermal cycling capability
Housing material compliant with EN45545-2 R23 (HL3) railway fire protection standards

Applications

Traction drives
Medium-voltage converters

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging, marking, or environmental compliance variations. Ensure the component matches the required electrical ratings and mechanical dimensions for the target application before procurement.

Selection Notes

Select this module for high-power applications requiring 6500 V blocking capability and robust thermal management. Consider the AlSiC substrate benefits for environments demanding high thermal cycling endurance. Verify gate drive requirements align with the specified internal resistance and charge characteristics.

Part Context

This component belongs to the XHP™3 product family from Infineon Technologies. It integrates third-generation Trench/Fieldstop IGBT technology with emitter-controlled diodes. The series is designed for industrial applications requiring high power density and reliability in demanding electrical environments.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Cross-reference key parameters such as voltage class, current rating, and package dimensions when evaluating potential replacement parts.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.