FF225R65T3E3P4BPMA1

FF225R65T3E3P4BPMA1

$1,375.47
  • Description:IHV IHM T XHP 3 3-6 5K AG-XHP3K6
  • Series:XHP™3

SKU:9890c08b8fe3 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IHV IHM T XHP 3 3-6 5K AG-XHP3K6
  • Series:XHP™3
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:2 Independent
  • Vce(on) (Max) @ Vge, Ic:3.4V @ 15V, 225A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-XHP3K65
  • Voltage - Collector Emitter Breakdown (Max):5900 V
  • Current - Collector (Ic) (Max):225 A
  • Power - Max:1000 W
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:65.6 nF @ 25 V

Download product information

FF225R65T3E3P4BPMA1

Overview

The FF225R65T3E3P4BPMA1 is an XHP™3 IGBT module featuring Trench/Fieldstop IGBT3 and emitter-controlled diodes. It provides a collector-emitter voltage (VCES) of 6500 V and a nominal continuous DC collector current (IC nom) of 225 A at TC = 80 °C, with a repetitive peak current (ICRM) of 450 A. The device utilizes an AlSiC base plate for enhanced thermal cycling capability and offers high creepage distances. Electrical characteristics include a typical saturation voltage (VCE,sat) of 3.40 V at 25 °C and a forward voltage (VF) of 3.55 V for the diode. The module supports operation temperatures from -50 °C to 125 °C.

Feature Summary

  • High-voltage insulation with CTI > 600 and 10.4 kV AC isolation test voltage
  • Robust mechanical design using AlSiC base plates for superior thermal cycling performance
  • Railway-compliant housing material meeting EN45545-2 R23 (HL3) fire protection standards

Applications

  • Traction drives
  • Medium-voltage converters

Procurement Notes

Verify the specific ordering suffix P4BPMA1 against official Infineon documentation to confirm exact packaging and marking details. Ensure that the component meets all necessary industrial qualification standards, including IEC 60747, 60749, and 60068, before integration into final designs.

Selection Notes

Select this module for applications requiring high blocking voltages up to 6500 V and robust thermal management. The AlSiC substrate is critical for environments demanding high thermal cycling endurance. Verify gate drive requirements against the specified internal resistance and capacitance values to ensure optimal switching performance.

Part Context

This component belongs to the XHP™3 series, designed for high-power industrial applications. It represents an evolution in high-voltage IGBT technology, combining advanced trench structures with field-stop techniques to optimize conduction and switching losses while maintaining high reliability under extreme electrical stress.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Evaluate other XHP™3 variants or legacy XHP™ modules based on matching voltage ratings, current capabilities, and package dimensions. Confirm pinout compatibility and thermal resistance specifications when considering alternative part numbers.

FF225R65T3E3P4BPMA1FF225R65T3E3P4BPMA1
$1,375.47
Buy Now