FF225R65T3E3P6BPMA1

Overview

The FF225R65T3E3P6BPMA1 is an XHP™3 IGBT module utilizing Trench/Fieldstop IGBT3 technology and an emitter-controlled diode. It features a collector-emitter voltage (VCES) of 6500 V at 125 °C and a nominal continuous DC collector current (ICDC) of 225 A at TC = 80 °C. The repetitive peak collector current (ICRM) reaches 450 A. The module incorporates an AlSiC base plate for enhanced thermal cycling capability and provides 10.4 kV AC insulation stability. Operating junction temperatures range from -50 °C to 125 °C, with a storage temperature down to -55 °C.

Feature Summary

• High dynamic robustness combined with low saturation voltage characteristics
• AlSiC base plate construction designed to increase thermal cycling capability
• Enhanced insulation system providing 10.4 kV AC isolation over 60 seconds
• Housing material compliant with EN45545-2 R23 (HL3) fire protection classification

Applications

• Traction drives
• Medium-voltage converters

Procurement Notes

Verify the specific ordering suffix P6BPMA1 against official Infineon documentation to confirm mechanical pinout and terminal configuration details. Ensure that the selected gate drive circuitry accommodates the specified internal gate resistance and capacitance values. Confirm compliance with industrial qualification standards such as IEC 60747 and IEC 60068 prior to integration into final equipment designs.

Selection Notes

Select this component for high-voltage applications requiring robust short-circuit withstand capabilities up to 1300 A. Evaluate the thermal resistance parameters, specifically the junction-to-case value of 29.1 K/kW for the IGBT, to design appropriate heatsinking solutions. Consider the maximum power dissipation limits and ensure the operating conditions remain within the defined reverse bias safe operating area boundaries.

Part Context

This part belongs to the FF225R65T3E3 series within the XHP™3 product family. It represents a high-power discrete semiconductor solution engineered for demanding industrial environments. The module integrates both the switching element and the freewheeling diode into a single chassis-mount package, simplifying assembly while maintaining high electrical isolation standards.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Verify that any alternative component matches the 6500 V rating, 225 A current capacity, and physical dimensions of the AG-XHP3K65 package.