FF23MR12W1M1PB11BPSA1

FET, MOSFET Arrays Overview

The FF23MR12W1M1PB11BPSA1 is a CoolSiC MOSFET module from Infineon Technologies, utilizing silicon carbide technology. It features an N-Channel dual configuration within the AG-EASY1BM-2 package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 50 A. The on-resistance is specified at 22.5 mOhms. Gate-source voltage limits range from -10 V to +20 V, with a threshold voltage of 3.45 V. The device supports press-fit installation and operates between -40°C and +150°C.

FET, MOSFET Arrays Feature Summary

• Utilizes silicon carbide (SiC) semiconductor technology for high-performance power switching.
• Features a dual N-Channel configuration designed for half-bridge applications.
• Incorporates press-fit mounting style for secure mechanical connection without soldering.
• Designed for industrial-grade reliability with extended thermal operating capabilities.

FET, MOSFET Arrays Applications

• Electric vehicle charging systems
• Uninterruptible power supplies
• Solar energy inverters
• Energy storage systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeiting risks. Confirm that the specific suffix BPSA1 matches design requirements, as ordering suffixes may indicate variations in packaging or tape-and-reel configurations rather than functional changes. Ensure compatibility with existing gate drive circuits given the SiC device characteristics. Check for end-of-life status notifications from the manufacturer before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this module when high-frequency switching and low conduction losses are critical for system efficiency. The 1.2 kV rating suits medium-voltage DC bus applications. Consider the 50 A current capability against thermal management constraints in the target enclosure. The press-fit interface requires compatible PCB land patterns and assembly tools. Evaluate the gate charge requirements against available driver strength to optimize switching transitions.

FET, MOSFET Arrays Part Context

This component belongs to Infineon's CoolSiC Module family, specifically the EasyDUAL PressFIT series. It represents a generation of silicon carbide power modules designed to replace traditional silicon IGBTs in applications demanding higher efficiency and power density. The EasyPACK form factor allows for standardized mounting solutions across various power electronics designs.

FET, MOSFET Arrays Replacement Considerations

Consult official replacement guides for direct substitutes. Verify pinout compatibility and thermal resistance values when considering alternative part numbers. Ensure that any replacement maintains the same voltage and current ratings to prevent system failure.