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The FF2400R12IP7BPSA1 is a dual IGBT module manufactured by Infineon Technologies, designed for high-power industrial applications. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and supports a continuous collector current of 2.4 kA at 25°C. The device exhibits a typical collector-emitter saturation voltage of 12.7 V and a gate-emitter leakage current of 400 nA. With a maximum operating temperature of +150°C and screw mount installation style, it utilizes silicon technology within a tray package configuration.
Verify the specific suffix BPSA1 against official Infineon documentation to confirm exact pinout and terminal configuration, as suffixes often denote mechanical or electrical variations. Ensure compatibility with existing cooling solutions given the 2.4 kA current rating. Confirm RoHS compliance status through the manufacturer's latest product compliance report before integration into regulated environments.
Select this module when a dual IGBT topology is required for high-current industrial applications. The 1.2 kV rating suits medium-voltage systems. Evaluate thermal management requirements carefully due to the high continuous current. Compare against single-switch alternatives if space constraints allow, noting that the dual configuration may impact board layout complexity compared to standard half-bridge modules.
This component belongs to Infineon's IGBT module portfolio, specifically targeting industrial power electronics. It represents a solution for applications requiring robust switching capabilities at high currents. The dual configuration distinguishes it from half-bridge or single-switch variants within the same voltage class, offering specific circuit design flexibility for bridge leg implementations.
Direct replacement requires matching the dual IGBT configuration, 1.2 kV voltage rating, and 2.4 kA current capacity. Verify mechanical footprint and terminal alignment. Consult Infineon's cross-reference tools for updated equivalents, ensuring any substitute maintains identical thermal resistance characteristics and switching behavior for system stability.