FF2MR12KM1H

Description：MEDIUM POWER 62MM
Series：-

SKU:a79d7193e317 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MEDIUM POWER 62MM
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Half Bridge
Vce(on) (Max) @ Vge, Ic：-
Input：Standard
NTC Thermistor：No
Operating Temperature：-
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-62MM
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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FF2MR12KM1H

Overview

The FF2MR12KM1H is a CoolSiC MOSFET half-bridge module manufactured by Infineon Technologies. It utilizes silicon carbide (SiC) technology and operates at a voltage rating of 2300 V. The module features an on-resistance (RDS(on)) of 2 mΩ at Tj = 25°C. Its physical dimensions are 106.4 mm in length and 61.4 mm in width, with a standard package size of 62 mm. The component is designed for industrial quality standards and supports applications including UPS systems, energy storage systems (ESS), solar inverters, and EV chargers.

Feature Summary

Utilizes silicon carbide (SiC) technology for high-performance power switching.
Configured as a half-bridge topology for efficient power conversion.
Designed to meet industrial quality grade requirements.

Applications

Uninterruptible Power Supply (UPS)
Energy Storage Systems (ESS)
Solar Inverters
Electric Vehicle (EV) Chargers

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct configuration. Confirm RoHS compliance status through the manufacturer's certificate. Cross-reference datasheet revisions to validate electrical parameters before integration into designs.

Selection Notes

Select this module for applications requiring high voltage blocking capability and low conduction losses. Ensure thermal management solutions accommodate the 62 mm package footprint. Verify that gate drive circuits support the switching characteristics of 2300 V SiC devices.

Part Context

This component belongs to the CoolSiC M1H series from Infineon Technologies. The series focuses on medium power modules utilizing advanced silicon carbide MOSFETs. These modules are engineered to replace traditional silicon IGBTs in high-efficiency power electronics.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Direct replacements must match the 2300 V rating and half-bridge topology. Verify pin compatibility and thermal interface specifications before swapping components.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.