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Product Detailed Parameters
- Description：MEDIUM POWER 62MM
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：-
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-62MMHB
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FF2MR12KM1HHPSA1 is a CoolSiC™ Trench MOSFET half-bridge module from Infineon Technologies, utilizing the 62 mm C-Series package. It features a drain-source voltage (VDSS) of 1200 V and a nominal drain current (IDN) of 420 A, with a repetitive peak current (IDRM) of 840 A. The on-state resistance (RDS(on)) is typically 1.96 mΩ at 25 °C. The module provides high current density and low switching losses, supported by an internal gate resistor of 1.3 Ω. It includes a copper baseplate for thermal management and offers 4 kV AC insulation potential.
Feature Summary
- High current density enabled by CoolSiC™ Trench technology
- Low switching losses for efficient high-frequency operation
- Robust mechanical design with 4 kV AC insulation capability
Applications
- Uninterruptible Power Supply (UPS) systems
- Solar energy applications
- DC/DC converters
- Energy storage systems
- EV DC chargers
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure compliance with industrial qualification standards such as IEC 60747, 60749, and 60068 before integration. Confirm mounting torque specifications and thermal interface material requirements during assembly to maintain device reliability and performance integrity.
Selection Notes
Select this component for designs requiring high power density and fast switching speeds in the 1200 V range. Consider the thermal resistance values and operating temperature limits when designing the heatsink system. Evaluate the gate drive requirements based on the specified recommended gate voltages to optimize switching performance and minimize losses.
Part Context
This part belongs to the Infineon CoolSiC™ M1H series, representing silicon carbide power modules designed for medium power applications. The 62 mm form factor allows for standardized mounting solutions within power electronics architectures. It serves as a key component for modernizing power conversion systems that demand higher efficiency and compactness compared to traditional silicon-based alternatives.
Replacement Considerations
Direct replacements must match the 1200 V rating, 62 mm package dimensions, and half-bridge topology. Verify compatibility with existing gate drive circuits due to potential differences in gate charge and threshold voltage characteristics between different manufacturers or generations of SiC MOSFETs.
