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FF2MR12KM1HOSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V 500A AG-62MM. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF2MR12KM1HOSA1
- Description：MOSFET 2N-CH 1200V 500A AG-62MM
- Series：CoolSiC™
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：500A (Tc)
- Rds On (Max) @ Id, Vgs：2.13mOhm @ 500A, 15V
- Vgs(th) (Max) @ Id：5.15V @ 224mA
- Gate Charge (Qg) (Max) @ Vgs：1340nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：39700pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-62MM
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF2MR12KM1HOSA1
FET, MOSFET Arrays Overview
The FF2MR12KM1HOSA1 is a CoolSiC MOSFET half-bridge module manufactured by Infineon Technologies. It utilizes silicon carbide technology and belongs to the M1H series. The component features a 62 mm package size and is designed for industrial applications. Key electrical parameters include a drain-source voltage of 2300 V and an on-resistance of 2 mΩ at Tj = 25°C. The module supports high-temperature operation up to +175°C.
FET, MOSFET Arrays Feature Summary
- Utilizes silicon carbide (SiC) technology for enhanced thermal performance
- Configured as a half-bridge topology with integrated diodes
- Features low on-resistance for efficient power switching
- Designed for robust industrial-grade reliability
FET, MOSFET Arrays Applications
- Uninterruptible Power Supplies (UPS)
- Energy Storage Systems (ESS)
- Solar Inverters
- Electric Vehicle Chargers
FET, MOSFET Arrays Procurement Notes
Verify the exact suffix against official Infineon documentation, as variations like HPSA1 or HP may exist. Confirm RoHS compliance status through the manufacturer's certificate. Ensure the ordering part number matches the specific thermal and electrical requirements of the target design before finalizing procurement.
FET, MOSFET Arrays Selection Notes
Select this module for high-voltage applications requiring superior thermal conductivity and switching efficiency compared to silicon alternatives. Consider the 2300 V rating for systems operating above standard grid voltages. Evaluate the 62 mm package dimensions for compatibility with existing heatsink and mounting infrastructure in power conversion designs.
FET, MOSFET Arrays Part Context
This component is part of Infineon's CoolSiC portfolio, specifically the M1H generation. It represents a shift towards wider bandgap semiconductors for medium-power applications. The module integrates multiple SiC MOSFETs into a single compact unit, simplifying circuit layout and improving system density for modern power electronics.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided data. Verify compatibility with direct replacements only through official Infineon cross-reference tools.
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