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FF2MR12W3M1HB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 4N-CH 1200V AG-EASY3B. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF2MR12W3M1HB11BPSA1
- Description：MOSFET 4N-CH 1200V AG-EASY3B
- Series：EasyPACK™, CoolSiC™
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：400A (Tj)
- Rds On (Max) @ Id, Vgs：2.27mOhm @ 400A, 18V
- Vgs(th) (Max) @ Id：5.15V @ 224mA
- Gate Charge (Qg) (Max) @ Vgs：1600nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds：48400pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-EASY3B
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF2MR12W3M1HB11BPSA1
FET, MOSFET Arrays Overview
The FF2MR12W3M1HB11BPSA1 is a CoolSiC Trench MOSFET module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC drain current of 400 A at 175 °C junction temperature. The device has a maximum repetitive peak drain current of 800 A and an on-state resistance of 2.27 mΩ at 25 °C. Operating temperatures range from -40 °C to +175 °C, with a storage temperature up to 125 °C.
FET, MOSFET Arrays Feature Summary
- Utilizes PressFIT contact technology for robust mechanical connection
- Includes an integrated NTC temperature sensor for thermal monitoring
- Features rugged mounting via integrated mounting clamps
- Designed for low switching losses and high current density
FET, MOSFET Arrays Applications
- High-frequency switching applications
- Solar power systems
- UPS systems
- DC/DC converters
- Servo drives
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix B11 against official Infineon documentation to confirm exact configuration details. Ensure compliance with IEC 60747, 60749, and 60068 standards for industrial application validation before procurement. Confirm that gate voltage selections align with recommended guidelines to ensure long-term reliability.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring high efficiency and compact size in power conversion systems. Consider the 1200 V rating and 400 A continuous current capability for demanding industrial loads. Evaluate the thermal management requirements based on the specified junction-to-heatsink resistance and operating temperature limits.
FET, MOSFET Arrays Part Context
This part belongs to the Infineon CoolSiC™ M1H series within the EasyPACK™ family. It utilizes silicon carbide (SiC) technology to achieve superior performance compared to traditional silicon devices. The module integrates advanced trench MOSFET structures optimized for high-power density applications.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon cross-reference documents for verified substitutes. No direct public substitute part numbers are confirmed in the provided datasheet.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
