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The FF300R06KE3B2HOSA1 is a dual IGBT module from Infineon's Trenchstop IGBT3 series, utilizing Emitter Controlled 3 diode technology. It features M5 power terminals and a 62mm C-series housing with a copper baseplate. The collector-emitter voltage (VCES) is rated at 600 V, with a continuous DC collector current of 400 A at 25°C and 300 A at 70°C. The total power dissipation is 940 W at 25°C. The module operates within a junction temperature range of -40°C to 150°C.
Verify the specific ordering suffix B2 against official Infineon documentation to confirm exact manufacturing specifications. Ensure that procurement channels provide valid traceability documents matching the SP000100749 part number alias. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing orders.
Select this component for designs requiring a 600V rating with high current capacity up to 400A. Evaluate thermal management requirements based on the 0.16 K/W junction-to-case resistance. Ensure gate drive circuits support the specified ±20 V peak voltage and account for the 3.20 µC gate charge during switching transitions.
This module belongs to the Infineon Trenchstop IGBT3 family, specifically the 62mm C-series. It represents a generation of silicon modules designed for medium to high-power applications. The HOSA1 suffix indicates a specific production variant or marking code associated with the standard FF300R06KE3_B2 designation.
Direct substitutes include the FF300R06KE3 and FF300R06KE3HOSA1. Verify pinout compatibility and thermal resistance values when replacing units to ensure system integrity without redesigning the cooling infrastructure.
The module can withstand a short circuit for up to 8 µs at a junction temperature of 25°C and up to 6 µs at 150°C.
The recommended tightening torque for the M5 screw terminals is between 2.5 Nm and 5.0 Nm.
Yes, the module features internal basic insulation using Aluminum Oxide (Al2O3) compliant with Class 1 protection standards.