FF300R12KE3HOSA1

Overview

The FF300R12KE3HOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trenchstop technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 300 A at 25°C. The saturation voltage is specified at 1.75 V, with a gate-emitter leakage current of 400 nA. Operating within a temperature range of -40°C to +125°C, the device employs screw mount installation in a 62 mm package.

Feature Summary

• Dual configuration for phase leg applications
• Trenchstop IGBT technology for optimized switching performance
• Robust thermal management capabilities up to 125°C junction temperature

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Commercial vehicle inverters

Procurement Notes

Verify the specific suffix HOSA1 against official Infineon documentation to confirm RoHS compliance status and exact manufacturing lot details. Cross-reference the datasheet revision history to ensure compatibility with existing design specifications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a 1200 V rating with 300 A continuous current handling. Ensure the cooling system supports the thermal dissipation requirements associated with the 1.75 V saturation voltage. Verify that the PCB layout accommodates the 62 mm package dimensions and screw mounting hardware.

Part Context

This module belongs to the Trenchstop IGBT4 series, designed for hard and soft switching applications. It integrates N-channel technology to combine MOSFET gate drive simplicity with bipolar transistor high-current capability, suitable for efficient power conversion in industrial environments.

Replacement Considerations

FF300R12KT4PHOSA1 offers similar electrical characteristics with updated Trenchstop technology. FF300R12KS4PHOSA1 provides alternative switching speeds but differs in saturation voltage. Verify pinout and thermal interface compatibility when substituting.