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Product Detailed Parameters
- Description：IGBT MOD 1200V 460A 1600W
- Series：C
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 300A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：460 A
- Power - Max：1600 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：19 nF @ 25 V
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Overview
The FF300R12KE4EHOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology with an Emitter Controlled HE diode. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 300 A at TC = 100°C, rising to 460 A at TC = 25°C. The repetitive peak collector current (ICRM) is 600 A. Typical collector-emitter saturation voltage (VCE sat) is 1.75 V at Tvj = 25°C. Total power dissipation (Ptot) reaches 1600 W at TC = 25°C. Operating junction temperature ranges from -40°C to 150°C.
Feature Summary
- Incorporates fast Trench/Fieldstop IGBT4 technology for high-frequency switching applications.
- Features an isolated copper base plate with high creepage and clearance distances.
- Includes an emitter controlled high-speed diode optimized for inverter use.
- Provides 4 kV AC insulation capability for one minute.
Applications
- 3-Level Applications
- High Frequency Switching Applications
- High Power Converters
- Solar Applications
- UPS Systems
Procurement Notes
Verify the specific ordering suffix EHOSA1 against official documentation to confirm exact manufacturing details. Ensure compliance with RoHS standards as indicated in the datasheet. Confirm that the component meets UL approval requirements under file number E83335 before integration into safety-critical designs.
Selection Notes
Select this module for designs requiring increased DC link voltage tolerance and operation up to 150°C junction temperature. Evaluate thermal resistance values carefully, noting RthJC is 0.093 K/W per IGBT and 0.15 K/W per diode. Consider the internal gate resistor of 2.5 Ω when designing drive circuits.
Part Context
This component belongs to the 62mm C-Series module family from Infineon. It represents an evolution in IGBT modules designed for robust performance in industrial power electronics. The package utilizes standard housing dimensions compatible with existing cooling solutions for 62mm form factor modules.
Replacement Considerations
Direct substitutes within the same series include FF300R12KE3 and FF300R12KT4. Verify pinout compatibility and thermal characteristics when transitioning between these variants to ensure system integrity.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature (Tvj op) is 150°C.
Does the module have an isolated base plate?
Yes, the module features an isolated copper base plate.
What is the isolation test voltage?
The isolation test voltage (VISOL) is 4.0 kV RMS for 1 minute at 50 Hz.
