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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF300R12KS4PHOSA1 is a dual IGBT module from the 62mm C-Series, utilizing fast IGBT2 technology for high-frequency switching. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 300 A at 25°C. The repetitive peak collector current (ICRM) reaches 600 A. Key electrical parameters include a typical collector-emitter saturation voltage (VCE sat) of 3.20 V at 25°C and a gate threshold voltage (VGEth) of 5.50 V. The module incorporates pre-applied thermal interface material and offers a junction-to-heatsink thermal resistance (RthJH) of 0.086 K/W per IGBT.
Verify the specific ordering suffix PHOSA1 against official Infineon documentation to confirm compliance with RoHS standards and lead-free manufacturing requirements. Ensure that the procurement channel provides valid traceability data matching the module serial number and datecode printed on the component label.
Select this module when designing circuits requiring high short-circuit robustness and low switching losses. Confirm that the system's cooling solution can maintain the junction temperature within the -40°C to 125°C operating range. Verify that the gate drive circuitry supports the specified ±15 V gate-emitter voltage levels.
This component belongs to the Infineon 62mm C-Series, which integrates fast IGBT2 chips into a standardized mechanical footprint. The series is engineered for industrial power electronics where high power density and reliable performance under demanding switching conditions are required.
Consult official Infineon cross-reference documents for verified substitutes. Do not assume functional equivalence based solely on voltage and current ratings without verifying switching characteristics and thermal resistance values.