FF300R12KT3EHOSA1

Overview

The FF300R12KT3EHOSA1 is a 62mm C-series IGBT module with common emitter topology. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 300 A at TC=80°C, rising to 480 A at TC=25°C. The repetitive peak collector current reaches 600 A for 1 ms pulses. Total power dissipation is rated at 1450 W at TC=25°C. The gate-emitter peak voltage is +/-20 V. Switching losses at Tvj=125°C include Eon of 25.0 mJ and Eoff of 37.0 mJ. Thermal resistance from junction to case is 0.085 K/W per IGBT and 0.15 K/W per diode.

Feature Summary

• Common emitter configuration within the 62mm C-series package
• High short-circuit capability up to 1200 A for 10 µs
• Integrated anti-parallel fast recovery diode

Applications

• Inverter circuits
• Industrial motor drives
• Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific suffix EHOSA1 against official Infineon documentation to confirm exact manufacturing lot or regional compliance variations. Confirm RoHS status and check for any obsolescence notices such as NRND before finalizing procurement plans.

Selection Notes

Select this component for applications requiring high current density in a standard 62mm footprint. Ensure the cooling system can maintain the case temperature within limits to support the specified 300 A continuous current rating without exceeding the maximum junction temperature of 125°C.

Part Context

This module belongs to the Trench/Fieldstop IGBT3 technology family. It utilizes silicon semiconductor technology and is designed for hard switching applications. The package dimensions are approximately 106.4 mm by 61.4 mm with a height of 30.9 mm.

Replacement Considerations

Public confirmed substitute part numbers: FF300R12KT3HOSA1.