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Product Detailed Parameters
- Description：IGBT MODULE 1200V 300A
- Series：C
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 300A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：300 A
- Power - Max：-
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：19 nF @ 25 V
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Overview
The FF300R12KT4PHOSA1 is a dual IGBT module from Infineon's Trenchstop IGBT4 series, designed for high-power applications. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 300 A at 75°C baseplate temperature. The module incorporates fast Trench/Fieldstop IGBT4 technology paired with an Emitter Controlled HE diode. Key electrical parameters include a typical VCEsat of 1.75 V at 25°C and a maximum gate-emitter peak voltage (VGES) of ±20 V. It operates within a junction temperature range of -40°C to 150°C.
Feature Summary
- Utilizes Trench/Fieldstop IGBT4 technology combined with Emitter Controlled HE diodes for optimized switching performance.
- Features pre-applied thermal interface material to simplify assembly and ensure consistent thermal contact.
- Provides robust insulation with 4 kV AC isolation capability and high creepage/clearance distances.
Applications
- High power converters
- Motor drives
- UPS systems
- Wind turbines
Procurement Notes
Verify the specific ordering suffix PHOSA1 against official Infineon documentation to confirm compliance with RoHS standards and lead-free requirements. Ensure that the procurement channel provides valid traceability data matching the module serial number and datecode printed on the component label.
Selection Notes
Select this module for designs requiring low switching losses and high short-circuit robustness. Confirm that the application circuit supports the specified gate drive voltages and that the thermal management system can maintain the junction temperature within the 150°C operational limit under expected load conditions.
Part Context
This component belongs to the 62mm C-Series module family from Infineon Technologies. It represents the Trenchstop IGBT4 generation, which integrates field-stop technology to reduce both static and dynamic losses compared to previous NPT-based designs.
Replacement Considerations
Direct replacements must match the 62mm package footprint and 1200V/300A ratings. Verify compatibility with existing gate drive circuits due to potential differences in internal gate resistance and switching characteristics between different IGBT generations.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current (ICRM) is 600 A for a pulse duration of 1 ms.
Does the module include thermal interface material?
Yes, the module comes with pre-applied thermal interface material to facilitate mounting onto heatsinks.
What is the isolation test voltage?
The module supports an isolation test voltage of 4.0 kV RMS for 1 minute at 50 Hz.
