FF300R17KE3S4HOSA1

Overview

The FF300R17KE3S4HOSA1 is a 62mm C-series IGBT module featuring Trench/Fieldstop IGBT3 technology and an Emitter Controlled 3 diode. It provides a collector-emitter voltage (VCES) of 1700 V. The continuous DC collector current (IC) reaches 404 A at TC = 25°C and 300 A at TC = 80°C, with a repetitive peak collector current (ICRM) of 600 A. Total power dissipation (Ptot) is rated at 1450 W at TC = 25°C. The module operates within a junction temperature range of -40°C to +125°C.

Feature Summary

• Incorporates Trench/Fieldstop IGBT3 technology for optimized switching performance.
• Features an integrated Emitter Controlled 3 diode for improved reverse recovery characteristics.
• Designed in a robust 62mm C-series housing suitable for high-power applications.

Applications

• High-power converters
• Motor drives
• Wind turbines

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm specific manufacturing lot or packaging variations. Ensure compatibility with standard mounting hardware and thermal interface materials specified in the application notes. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.

Selection Notes

Select this component based on its 1700 V blocking capability and 300 A to 404 A current ratings depending on thermal conditions. Evaluate the thermal resistance values (RthJC and RthCH) to design an appropriate heatsinking solution. Confirm that the gate drive requirements align with the specified threshold voltages and internal gate resistance parameters.

Part Context

This module belongs to Infineon's 62mm C-series lineup, utilizing Trenchstop IGBT3 technology. It is designed as a half-bridge configuration within a single package. The series is engineered for industrial applications requiring high reliability and efficient power conversion capabilities under demanding electrical loads.

Replacement Considerations

FF300R17KE3HOSA1