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The FF300R17KE4HOSA1 is a dual IGBT module utilizing Trench/Fieldstop IGBT4 technology with an emitter-controlled diode. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 300 A at TC = 100°C, reaching 440 A at TC = 25°C. The repetitive peak collector current (ICRM) is 600 A. Typical saturation voltage (VCEsat) is 1.95 V at Tvj = 25°C and 300 A. Total power dissipation (Ptot) is 1800 W at TC = 25°C. Operating junction temperature ranges from -40°C to 150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm mechanical variations or material content changes. Ensure compatibility with standard mounting torque specifications for M6 screws during installation. Cross-reference datasheet revision numbers to validate electrical parameters before finalizing procurement orders.
Select this component based on its 1700 V rating and 300 A nominal current capability within the 62 mm C-Series housing. Evaluate thermal resistance values and stray inductance requirements for the target switching frequency. Confirm that the gate drive circuitry supports the specified threshold voltage and internal gate resistor characteristics.
This part belongs to the Infineon TRENCHSTOP IGBT4 family, specifically designed for industrial applications requiring high reliability. It utilizes silicon technology and is housed in a standard 62 mm module format. The product line emphasizes extended operation temperatures and unbeatable short-circuit robustness for demanding power electronics environments.
FF300R17KE4