FF300R17KE4PHOSA1

$106.39

Description：IGBT MODULE 1700V 300A
Series：C

SKU:93d2ba804dc1 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1700V 300A
Series：C
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Half Bridge
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 300A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：300 A
Power - Max：-
Current - Collector Cutoff (Max)：1 mA
Input Capacitance (Cies) @ Vce：24.5 nF @ 25 V

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FF300R17KE4PHOSA1

Overview

The FF300R17KE4PHOSA1 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It provides a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 300 A at TH = 70°C with a maximum junction temperature of 175°C. The repetitive peak collector current (ICRM) reaches 600 A for 1 ms pulses. The module includes pre-applied thermal interface material, offers 4 kV AC insulation for 1 minute, and operates within a junction temperature range of -40°C to 150°C.

Feature Summary

Trench/Fieldstop IGBT4 technology combined with Emitter Controlled Diode
Pre-applied Thermal Interface Material for simplified assembly
Extended operating junction temperature up to 150°C
High creepage and clearance distances with CTI greater than 400

Applications

High power converters
Motor drives
UPS systems
Wind turbines

Procurement Notes

Verify the specific ordering suffix PHOSA1 against official Infineon documentation to confirm exact packaging and RoHS compliance status. Confirm that the pre-applied thermal interface material requirements are met during storage and transport according to application notes. Ensure mounting torque specifications for M6 screws align with valid application guidelines before procurement.

Selection Notes

Select this component for high-power applications requiring robust short-circuit withstand capability and low saturation voltage. Verify that the system's cooling solution accommodates the specified thermal resistance values. Ensure gate drive voltages remain within the ±20 V limit and consider the positive temperature coefficient of VCEsat for parallel operation stability.

Part Context

This module belongs to the 62mm C-Series from Infineon Technologies, utilizing TRENCHSTOP™ IGBT4 technology. It is designed as a half-bridge configuration suitable for industrial and renewable energy applications. The package integrates copper baseplate construction with aluminum oxide internal isolation for effective thermal management and electrical safety.