FF3MR12KM1HHPSA1

$328.56

Description：MOSFET 2N-CH 1200V 190A AG62MMHB
Series：CoolSiC™

SKU:7dbbfb93e259 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF3MR12KM1HHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V 190A AG62MMHB. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF3MR12KM1HHPSA1

Description：MOSFET 2N-CH 1200V 190A AG62MMHB
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Box
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：190A (Tc)
Rds On (Max) @ Id, Vgs：4.44mOhm @ 280A, 18V
Vgs(th) (Max) @ Id：5.1V @ 112mA
Gate Charge (Qg) (Max) @ Vgs：800nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：24200pF @ 800V
Power - Max：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-62MMHB
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF3MR12KM1HHPSA1

FF3MR12KM1HHPSA1

FET, MOSFET Arrays Overview

The FF3MR12KM1HHPSA1 is a 62 mm C-Series CoolSiC™ Trench MOSFET half-bridge module manufactured by Infineon Technologies. It features a drain-source voltage (VDSS) of 1200 V, implemented drain current (IDN) of 280 A, and repetitive peak drain current (IDRM) of 560 A. The module utilizes screw mounting with M6 terminals and provides 4 kV AC insulation. Operating junction temperature ranges from -40 °C to +175 °C.

FET, MOSFET Arrays Feature Summary

High current density utilizing CoolSiC™ Trench MOSFET technology
Low switching losses for high-frequency applications
Integrated body diode with optimized forward characteristics
Qualified for industrial applications per IEC standards

FET, MOSFET Arrays Applications

Uninterruptible Power Supply (UPS) systems
Solar inverter applications
DC/DC converters
Energy storage systems
Electric vehicle DC chargers

FET, MOSFET Arrays Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm specific manufacturing lot or packaging variations. Ensure compatibility with recommended gate drivers listed in the datasheet. Confirm mechanical mounting torque specifications before installation to maintain electrical isolation integrity and thermal performance.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high efficiency and compact form factors in power conversion circuits. Evaluate thermal resistance values relative to the heatsink design to ensure operation within the maximum junction temperature limits. Consider the gate charge requirements when designing the driver circuitry to optimize switching speed and minimize losses.

FET, MOSFET Arrays Part Context

This part belongs to the 62 mm C-Series module family, designed for industrial power electronics. It integrates silicon carbide technology to replace traditional silicon devices, offering superior thermal management and reduced system size. The module is intended for robust industrial environments requiring high reliability.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the 1200 V rating, 62 mm footprint, and pinout configuration. Verify that alternative components meet the same industrial qualification standards and thermal performance metrics.