FF3MR12KM1HPHPSA1

$333.16

Description：MOSFET 2N-CH 1200V 220A AG62MMHB
Series：CoolSiC™

SKU:edc662ddddd7 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF3MR12KM1HPHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V 220A AG62MMHB. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF3MR12KM1HPHPSA1

Description：MOSFET 2N-CH 1200V 220A AG62MMHB
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Box
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：220A
Rds On (Max) @ Id, Vgs：4.44mOhm @ 280A, 18V
Vgs(th) (Max) @ Id：5.1V @ 112mA
Gate Charge (Qg) (Max) @ Vgs：800nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：24200pF @ 800V
Power - Max：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-62MMHB
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF3MR12KM1HPHPSA1

FF3MR12KM1HPHPSA1

FET, MOSFET Arrays Overview

The Infineon FF3MR12KM1HPHPSA1 is a 62 mm C-Series half-bridge module featuring CoolSiC™ Trench MOSFET technology. It provides a drain-source voltage of 1200 V, a nominal continuous DC current of 280 A at 25 °C, and a repetitive peak current of 560 A. The device incorporates pre-applied thermal interface material and offers low switching losses with high current density. It supports operation up to a junction temperature of 175 °C and includes an integrated body diode.

FET, MOSFET Arrays Feature Summary

Utilizes CoolSiC™ Trench MOSFET technology for reduced switching losses and high current density
Includes pre-applied thermal interface material for simplified assembly
Features 4 kV AC insulation potential with basic insulation class 1
Integrated body diode with negative temperature coefficient characteristics

FET, MOSFET Arrays Applications

Uninterruptible Power Supply (UPS) systems
Solar photovoltaic applications
DC/DC converters
High-frequency switching applications
Energy storage systems
DC chargers for electric vehicles

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix HPSA1 against official documentation to confirm it denotes the version with pre-applied thermal interface material. Ensure compliance with industrial qualification standards IEC 60747, 60749, and 60068. Confirm gate driver compatibility using the manufacturer's GDFinder tool before procurement.

FET, MOSFET Arrays Selection Notes

Select this module for designs requiring high efficiency in power conversion due to low switching losses. Consider the 62 mm package dimensions for mechanical integration. Evaluate thermal management requirements based on the specified junction-to-heat sink thermal resistance. Verify that the system operates within the recommended gate voltage window to ensure long-term reliability.

FET, MOSFET Arrays Part Context

This component belongs to Infineon's 62 mm C-Series module family designed for industrial applications. It utilizes silicon carbide (SiC) technology to outperform traditional silicon devices in terms of speed and thermal performance. The series targets modern power electronics demanding compact size and high reliability.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists for compatible modules within the same C-Series family or other Infineon SiC half-bridge solutions. Verify pinout and electrical parameters match before replacing existing components.