FF3MR20KM1HPHPSA1

$574.39

Description：MOSFET 2N-CH 2000V AG-62MMHB
Series：C, CoolSiC™

SKU:6981f563f763 Category: FET, MOSFET Arrays Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

FF3MR20KM1HPHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 2000V AG-62MMHB. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF3MR20KM1HPHPSA1

Description：MOSFET 2N-CH 2000V AG-62MMHB
Series：C, CoolSiC™
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：2000V (2kV)
Current - Continuous Drain (Id) @ 25°C：325A (Tc)
Rds On (Max) @ Id, Vgs：4mOhm @ 400A, 18V
Vgs(th) (Max) @ Id：5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs：1560nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：48200pF @ 1200V
Power - Max：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-62MMHB
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF3MR20KM1HPHPSA1

FF3MR20KM1HPHPSA1

FET, MOSFET Arrays Overview

The FF3MR20KM1HPHPSA1 is a CoolSiC™ Trench MOSFET half-bridge module in the 62 mm C-Series package. It features a 2000 V drain-source voltage (VDSS) and supports a continuous DC drain current of 325 A at 175 °C, with a repetitive peak current of 800 A. The on-state resistance (RDS(on)) is typically 4 mΩ at 25 °C. Key electrical parameters include a total gate charge of 1.56 µC and an internal gate resistor of 0.9 Ω. The module includes pre-applied thermal interface material and offers 4 kV AC insulation.

FET, MOSFET Arrays Feature Summary

Utilizes CoolSiC™ Trench MOSFET technology for low switching losses and high current density.
Includes pre-applied thermal interface material to simplify assembly and ensure reliable thermal contact.
Provides robust isolation with 4 kV AC insulation potential and high creepage distances.

FET, MOSFET Arrays Applications

UPS systems
DC/DC converters
Solar applications
High-frequency switching applications

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including the HPSA1 suffix against official Infineon documentation to confirm specific ordering details. Ensure compatibility with recommended mounting torques and screw sizes specified in the application notes. Confirm that the pre-applied thermal interface material remains within its valid storage and shipment conditions as outlined in AN2012-07.

FET, MOSFET Arrays Selection Notes

Select this module for designs requiring high voltage blocking capability and efficient power conversion. Consider the thermal resistance of 0.118 K/W when designing heatsinking solutions. Evaluate the gate drive requirements based on the recommended voltages of 18 V and -3 V. Ensure the application operates within the validated industrial standards of IEC 60747, 60749, and 60068.

FET, MOSFET Arrays Part Context

This component belongs to Infineon's 62 mm C-Series module family, designed for compact and high-power-density applications. It integrates N-channel SiC MOSFETs with integrated body diodes. The series is optimized for industrial environments, offering improved reliability and performance compared to previous generations of silicon-based modules.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon cross-reference guides or datasheets for verified substitute part numbers. Do not assume functional equivalence with other packages or voltage ratings without explicit manufacturer confirmation.