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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF400R12KT3PEHOSA1 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT3 technology and an Emitter Controlled High Efficiency diode. It includes pre-applied thermal interface material (TIM). The module has a collector-emitter voltage of 1200 V, a continuous DC collector current of 400 A at TH=65°C, and a repetitive peak collector current of 800 A. Typical saturation voltages are 1.70 V for the IGBT and 1.65 V for the diode at Tvj=25°C. Thermal resistance from junction to heatsink is 0.0847 K/W per IGBT and 0.151 K/W per diode.
Verify the exact ordering suffix against Infineon's official documentation to ensure correct configuration. Confirm that the pre-applied TIM requires specific storage and handling procedures as detailed in application note AN2012-07. Check for RoHS compliance status and UL approval number E83335 during sourcing.
Select this module for applications requiring high robustness and low switching losses. Ensure the cooling system can handle the specified thermal resistances. Verify gate drive requirements match the internal gate resistor and recommended operating conditions. Consider the 62mm package dimensions for mechanical integration.
This component belongs to Infineon's 62mm C-Series family of IGBT modules. It utilizes Trench/Fieldstop IGBT3 technology combined with an emitter controlled HE diode. The series is designed for industrial applications demanding high reliability and efficient power conversion in compact form factors.
Public confirmed substitute part numbers are not available in the provided datasheet. Consult Infineon directly for cross-reference information or updated product recommendations.