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Product Detailed Parameters
- Description：IGBT MOD 3300V 660A AIHV130-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：4.25V @ 15V, 400A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：A-IHV130-3
- Voltage - Collector Emitter Breakdown (Max)：3300 V
- Current - Collector (Ic) (Max)：660 A
- Power - Max：4800 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：50 nF @ 25 V
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Overview
The FF400R33KF2CB3NOSA1 is a high-voltage IGBT inverter module from Infineon Technologies, rated for a collector-emitter voltage of 3300 V and a continuous DC collector current of 400 A at 80°C case temperature. It utilizes IGBT2 Fast technology with an AlSiC baseplate and AlN internal insulation. The module features a short-circuit withstand capability of 2000 A for up to 10 µs. Key electrical parameters include a typical collector-emitter saturation voltage of 3.40 V at 25°C and a forward diode voltage of 2.80 V at 25°C. Thermal resistance from junction to case is 26.0 K/kW for the IGBT and 51.0 K/kW for the diode.
Feature Summary
- High-voltage robustness suitable for demanding industrial power applications
- Fast switching characteristics utilizing IGBT2 technology
- Integrated anti-parallel diode with defined reverse recovery behavior
- AlSiC substrate construction providing enhanced thermal stability
Applications
- Industrial motor drives and inverters
- Medium voltage AC drives
- Uninterruptible power supplies (UPS)
- Wind turbine converters
Procurement Notes
Verify the specific ordering suffix B3NOSA1 against official Infineon documentation to confirm exact manufacturing lot details and compliance status. Ensure that the procurement channel provides valid traceability certificates matching the component marking. Cross-reference the datasheet revision 2.1 to confirm all technical specifications align with the delivered units before integration into production systems.
Selection Notes
Select this module for applications requiring high blocking voltage and significant current handling capacity. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance values. Confirm that the gate drive circuitry can accommodate the recommended peak gate-emitter voltage limits and internal gate resistor characteristics to ensure optimal switching performance and device protection during operation.
Part Context
This component belongs to the FFxxR series of high-power IGBT modules designed by Infineon Technologies. It represents a generation of fast-switching devices optimized for inverter topologies in medium-voltage applications. The module integrates both the IGBT switch and the freewheeling diode within a single insulated package, facilitating compact design and reliable thermal dissipation for heavy-duty industrial power electronics systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing cooling structures and mounting torque specifications when considering alternative components from the same manufacturer or other vendors offering similar voltage and current ratings.
