FF450R07ME4BOSA1

Overview

The FF450R07ME4BOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trenchstop IGBT4 technology within the EconoDUAL™3 package. It features a collector-emitter voltage (VCES) of 650 V and a continuous DC collector current (ICDC) of 450 A at a case temperature of 70°C. The device supports a repetitive peak collector current (ICRM) of 900 A and operates with a junction temperature range up to 150°C. Key electrical parameters include a typical saturation voltage (VCEsat) of 1.55 V and a forward voltage (VF) of 1.55 V for the integrated emitter-controlled diode at 25°C. The module incorporates an isolated copper base plate and an integrated NTC thermistor for thermal monitoring.

Feature Summary

• High short-circuit capability and surge current handling
• Integrated NTC temperature sensor for reliable thermal management
• Isolated copper base plate design for enhanced power density
• Standard housing compatible with established mounting systems

Applications

• Commercial agriculture vehicles
• Uninterruptible Power Supply (UPS) systems
• Solar applications
• Motor drives

Procurement Notes

Verify component authenticity by cross-referencing the Data Matrix barcode on the module label with official Infineon records. Ensure the ordering suffix BOSA1 matches the required specification, as it denotes specific packaging or testing variations. Confirm that the procurement channel provides valid traceability documentation consistent with industrial quality standards.

Selection Notes

Select this module for applications requiring high current density and robust short-circuit withstand capability. Verify that the gate driver selection aligns with the recommended Infineon drivers listed in the datasheet. Ensure the cooling system maintains the case temperature below 70°C to sustain the rated 450 A continuous current without exceeding the maximum junction temperature limits.

Part Context

This component belongs to the Infineon EconoDUAL™3 series, designed for high-power industrial applications. It utilizes Trenchstop IGBT4 technology to optimize switching losses and conduction characteristics. The module integrates both the IGBT switch and an emitter-controlled diode in a single half-bridge configuration, simplifying circuit design for inverters and converters.

Replacement Considerations

Direct replacements within the same family include the FF300R07ME4BOSA1, which offers identical voltage ratings but lower current capacity. For higher current requirements, consider the FF600R07ME4 series. Always verify mechanical dimensions and pinout compatibility before substituting.