FF450R12KE4PHOSA1

$106.20

Description：IGBT MODULE 1200V 450A
Series：C

SKU:7039a2c30069 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1200V 450A
Series：C
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Half Bridge Inverter
Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 450A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：450 A
Power - Max：-
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：28 nF @ 25 V

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FF450R12KE4PHOSA1

Overview

The FF450R12KE4PHOSA1 is a single IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features an emitter-controlled HE diode and pre-applied thermal interface material within a 62 mm C-Series housing. The collector-emitter voltage (VCES) is rated at 1200 V, with a continuous DC collector current (IC nom) of 450 A at 70°C and a repetitive peak collector current (ICRM) of 900 A. The typical collector-emitter saturation voltage (VCEsat) is 1.75 V at 25°C. The module operates within a junction temperature range of -40°C to 150°C.

Feature Summary

Low switching losses combined with high robustness
Collector-emitter saturation voltage with positive temperature coefficient
Package featuring a CTI greater than 400 and isolated base plate
Pre-applied thermal interface material for simplified assembly

Applications

High power converters
Motor drives
UPS systems
Wind turbines

Procurement Notes

Verify the specific suffix PHOSA1 against official documentation to confirm exact manufacturing details or regional compliance variations. Ensure that the pre-applied thermal interface material is handled according to storage guidelines to maintain performance. Confirm mechanical mounting torque specifications for M6 screws during installation.

Selection Notes

Select this component for applications requiring high power density and low switching losses in the 1200 V class. The 62 mm C-Series package provides standard housing dimensions suitable for common cooling solutions. Evaluate the thermal resistance values provided in the datasheet to ensure adequate heat dissipation for the intended duty cycle.

Part Context

This module belongs to the Infineon IGBT4 series, specifically designed for inverter applications. It integrates a Trench/Fieldstop IGBT with an Emitter Controlled HE Diode. The product line emphasizes high efficiency and reliability for industrial power electronics, supporting designs that demand robust performance under varying load conditions.