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The FF450R12ME4B11BPSA2 is a half-bridge IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and an emitter-controlled HE diode. It features PressFIT contact technology and an integrated NTC thermistor. The collector-emitter voltage (VCES) is rated at 1200 V. The continuous DC collector current (ICDC) is 450 A at a case temperature of 100 °C, with a repetitive peak collector current (ICRM) of 900 A. The typical collector-emitter saturation voltage (VCEsat) is 1.75 V at 25 °C. The maximum operating junction temperature (Tvj op) is 150 °C.
Verify the specific ordering suffix B11 against official documentation to confirm the exact configuration and packaging details. Ensure that the procurement channel provides valid traceability and authenticity certificates. Confirm compliance with relevant industrial qualification standards such as IEC 60747, 60749, and 60068 before finalizing orders.
Select this component for applications requiring high current density and robust mechanical connections via PressFIT terminals. Consider the 1200 V rating and 450 A continuous current capability when designing power stages. Evaluate the thermal resistance values and operating temperature limits to ensure adequate heatsinking and cooling solutions are implemented for reliable operation.
This module belongs to the EconoDUAL™3 series, designed for compact and efficient power conversion. It integrates both the IGBT switch and the freewheeling diode in a single package. The PressFIT technology allows for direct mounting onto PCBs or busbars without soldering, reducing assembly complexity and improving electrical performance through lower stray inductance.
Direct substitutes within the same family include the FF450R12ME4P_B11. Verify pin compatibility and thermal characteristics when considering alternative part numbers.
The maximum operating junction temperature (Tvj op) is 150 °C.
Yes, the module includes an integrated NTC thermistor for temperature monitoring.
It uses PressFIT contact technology for terminal connections.