SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF450R17ME4P_B11 is an EconoDUAL™3 half-bridge IGBT module utilizing Trench/Fieldstop IGBT4 technology. It features a 1700 V collector-emitter voltage rating and a continuous DC collector current of 450 A at 25°C, with a repetitive peak current capability of 900 A. The module incorporates emitter-controlled diodes and operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a typical saturation voltage of 1.95 V and a forward voltage of 1.80 V at 25°C. It includes an integrated NTC thermistor rated at 5 kΩ and utilizes PressFIT terminal connections.
Verify component authenticity by cross-referencing the Data Matrix barcode on the module label with Infineon's official tracking systems. Ensure that the ordering suffix matches the specific technical configuration required for the application. Confirm compliance with industrial qualification standards such as IEC 60747 prior to integration into final equipment designs.
Select this module for applications requiring 1700 V blocking capability and high current handling up to 450 A. Consider the positive temperature coefficient of the saturation voltage for reliable parallel operation. Verify that the gate driver selection aligns with the specified gate charge and internal resistance values to ensure optimal switching times and minimize losses.
This component belongs to the Infineon EconoDUAL™3 series, designed for high-power industrial applications. It represents the Trenchstop IGBT4 generation, offering improved efficiency compared to previous technologies. The module is specifically engineered for robust performance in demanding environments, featuring an isolated copper base plate and standardized dimensions for heatsink compatibility.
Direct replacements within the same family include the FF450R17ME4 (screw mount) or the FF450R17ME3BOSA1. When substituting, verify that the mounting method (PressFIT vs. screw) and thermal interface requirements are compatible with the existing system design.
The module is qualified for an operating junction temperature range from -40°C to 150°C under switching conditions.
The module can withstand a short-circuit current of 2300 A for a duration of up to 10 µs at a junction temperature of 150°C.
The module provides basic insulation (Class 1 according to IEC 61140) using an aluminum oxide (Al2O3) ceramic substrate between the terminals and the copper base plate.