FF450R33T3E3B5P2BPSA1

Overview

The FF450R33T3E3B5P2BPSA1 is an XHP™3 power module featuring Trench/Fieldstop IGBT3 and emitter-controlled diodes. It offers a collector-emitter voltage of 3300 V, a nominal continuous DC collector current of 450 A at 100°C case temperature, and a repetitive peak current of 900 A. The device utilizes an AlSiC base plate for enhanced thermal cycling robustness and provides isolated insulation with a test voltage of 10.4 kV AC for 60 seconds. Operating junction temperatures range from -40°C to 150°C, ensuring high stability and low switching losses in demanding industrial environments.

Feature Summary

• Incorporates Trench/Fieldstop IGBT3 technology combined with emitter-controlled diodes for optimized switching performance.
• Features an aluminum silicon carbide (AlSiC) base plate designed to increase thermal cycling capability and mechanical robustness.
• Provides enhanced electrical isolation with a comparative tracking index exceeding 600 and high AC insulation strength.

Applications

• Traction drives
• Medium-voltage converters
• Motor drives

Procurement Notes

Verify the specific ordering suffix B5P2BPSA1 against official Infineon documentation to confirm exact packaging, tape-and-reel specifications, or regional compliance markings. Datasheet references primarily cite the base part number FF450R33T3E3_B5; ensure the full suffix matches your supply chain requirements before finalizing orders.

Selection Notes

Select this component for high-power applications requiring 3300 V blocking capability and 450 A continuous current handling. Ensure the design accommodates the specified thermal resistance values and mounting torque requirements for M6 and M3 screws. Verify that the gate drive circuitry supports the recommended ±15 V levels and internal gate resistor characteristics for optimal switching times.

Part Context

This module belongs to the Infineon XHP™3 family, which utilizes advanced Trench/Fieldstop IGBT3 technology. The series is engineered for high power density and reliability in medium-voltage applications. The XHP™3 architecture emphasizes reduced switching losses and improved short-circuit withstand capability compared to previous generations.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Direct replacements must match the 3300 V rating, 450 A current capacity, and XHP™3 package dimensions. Verify compatibility with existing thermal management solutions and gate drive interfaces before implementation.

FAQ

What is the maximum short-circuit withstand time for this module?

The module supports a short-circuit pulse duration of up to 10 µs under specified conditions, with a short-circuit current capability of 1800 A.

Does the module feature an isolated base plate?

Yes, the module includes an isolated base plate with a partial discharge extinction voltage of 5.1 kV RMS and an isolation test voltage of 10.4 kV RMS for 60 seconds.

What is the typical forward voltage of the integrated diode at 150°C?

At a forward current of 450 A and a junction temperature of 150°C, the typical forward voltage is 2.65 V, with a maximum of 2.95 V.