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The FF450R33T3E3_B5 is a high-power XHP™3 IGBT module featuring Trench/Fieldstop IGBT3 technology and an emitter-controlled diode. It provides a collector-emitter voltage of 3300 V and a continuous DC collector current of 450 A at a case temperature of 100°C, with a repetitive peak current capability of 900 A. The device operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a typical saturation voltage of 2.5 V at 25°C and a gate charge of 12.5 µC. The module utilizes an AlSiC base plate for enhanced thermal cycling robustness and offers isolated insulation rated at 10.4 kV AC.
Verify the exact ordering suffix against official Infineon documentation before procurement. Suffixes such as BPSA1 or P3B may indicate specific material content, RoHS compliance levels, or packaging variations that do not alter the core electrical function but are critical for supply chain compatibility. Confirm export control requirements if sourcing from restricted regions.
Select this component for applications requiring high voltage blocking and significant current handling in industrial environments. Ensure the cooling system maintains the case temperature at or below 100°C to sustain the 450 A rating. Verify that the gate drive circuitry can accommodate the specified internal gate resistance and peak voltage limits to prevent device damage during switching transitions.
This module belongs to the XHP™3 series, representing an evolution of Infineon's high-power discrete modules. It integrates Trench/Fieldstop IGBT3 technology to optimize the trade-off between conduction and switching losses. The design targets heavy-duty industrial power conversion systems where reliability and thermal stability are paramount.
Direct replacements must match the 3300 V rating, 450 A current capacity, and AG-XHP100-6 package dimensions. Verify pinout compatibility and thermal resistance values. Cross-referencing with other XHP series variants requires careful evaluation of switching speed and saturation voltage differences.