SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF450R33T3E3B5P4BPMA1 is an XHP™3 IGBT module featuring Trench/Fieldstop IGBT3 and emitter controlled 3 diode technology. It provides a collector-emitter voltage (VCES) of 3300 V, a continuous DC collector current (ICDC) of 450 A at TC = 100°C, and a repetitive peak collector current (ICRM) of 900 A. The module utilizes an AlSiC base plate for enhanced thermal cycling capability and offers high short-circuit robustness with low switching losses. Operating junction temperature ranges from -40°C to 150°C.
Verify the specific ordering suffix against the official Infineon datasheet to ensure correct packaging and terminal configuration. Confirm that the component meets all relevant industrial qualification standards, including IEC 60747, 60749, and 60068, prior to integration into the final design.
Select this module for applications requiring high voltage blocking capabilities up to 3300 V and substantial current handling. Ensure the cooling system can maintain the case temperature within specified limits to support the 450 A continuous current rating. Verify gate drive requirements align with the internal gate resistance and threshold voltage specifications.
This component belongs to the XHP™3 series of power modules manufactured by Infineon Technologies. It integrates advanced trench field-stop IGBT3 technology paired with emitter-controlled diodes. The series is engineered specifically for demanding industrial power conversion environments requiring high reliability and compact form factors.
Consult the official Infineon selection guide or datasheet for verified cross-reference part numbers. Do not substitute based on generic electrical parameters alone; verify mechanical dimensions, pinout compatibility, and thermal characteristics.