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The FF450R33T3E3B5P6BPMA1 is an XHP™3 IGBT module featuring Trench/Fieldstop IGBT3 and emitter-controlled diodes. It provides a collector-emitter voltage of 3300 V, a continuous DC collector current of 450 A at 100°C case temperature, and a repetitive peak current of 900 A. The module utilizes an AlSiC base plate for enhanced thermal cycling capability and offers isolated insulation with a test voltage of 10.4 kV AC for 60 seconds. Operating junction temperatures range from -40°C to 150°C.
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and terminal configuration. Confirm that the component meets all relevant industrial qualification standards, including IEC 60747, 60749, and 60068, before integration into final designs.
Select this module for high-power applications requiring 3300 V blocking capability and 450 A continuous current. Ensure the cooling system can maintain the case temperature within specified limits to support the 150°C operating junction temperature. Verify gate drive requirements match the internal resistance and charge characteristics.
This component belongs to the XHP™3 series from Infineon Technologies. It integrates Trench/Fieldstop IGBT3 technology with emitter-controlled diodes. The series is designed for medium-voltage industrial applications, offering high power density and reliability through advanced packaging and semiconductor structures.
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains equivalent voltage ratings, current capabilities, and package dimensions. Verify compatibility with existing thermal management and gate drive circuits.