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FF4MR12W2M1HB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V 170A MODULE. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF4MR12W2M1HB11BPSA1
- Description：MOSFET 2N-CH 1200V 170A MODULE
- Series：CoolSiC™
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：170A (Tj)
- Rds On (Max) @ Id, Vgs：4mOhm @ 200A, 18V
- Vgs(th) (Max) @ Id：5.15V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs：594nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds：17600pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF4MR12W2M1HB11BPSA1
FET, MOSFET Arrays Overview
The FF4MR12W2M1HB11BPSA1 is a CoolSiC™ Trench MOSFET EasyDUAL module featuring PressFIT technology and an integrated NTC sensor. It provides a drain-source voltage of 1200 V, a continuous DC current of 170 A at 65 °C heatsink temperature, and a repetitive peak current of 400 A. The device incorporates low switching losses, high current density, and minimal stray inductance of 8 nH.
FET, MOSFET Arrays Feature Summary
- Utilizes Infineon CoolSiC™ Trench MOSFET technology for enhanced efficiency
- Features rugged mounting with integrated clamps and PressFIT contact technology
- Includes an integrated NTC temperature sensor for thermal monitoring
- Designed for low inductive layout to minimize switching losses
FET, MOSFET Arrays Applications
- Solar applications
- High-frequency switching applications
- DC/DC converters
- UPS systems
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix B11 against official documentation to confirm the inclusion of PressFIT contacts and the NTC thermistor. Ensure compatibility with recommended gate drivers by consulting the Infineon Gate Driver Finder. Confirm that the application environment meets the industrial qualification standards defined in IEC 60747, 60749, and 60068.
FET, MOSFET Arrays Selection Notes
Select this module for designs requiring high current density and low switching losses. Consider the thermal resistance of 0.328 K/W and the operating junction temperature range up to 175 °C. Verify that the system can accommodate the PressFIT mounting force requirements between 40 N and 80 N per clamp.
FET, MOSFET Arrays Part Context
This component belongs to the Infineon EasyDUAL series, which utilizes CoolSiC™ technology. It is designed as a half-bridge module intended for industrial power electronics applications where high reliability and efficient thermal management are critical requirements.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon resources for qualified substitutes within the M1H series or compatible EasyDUAL modules. Verify pinout compatibility and electrical ratings before considering alternative part numbers.
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