FF4MR20KM1HSHPSA1

Overview

The FF4MR20KM1HSHPSA1 is a half-bridge module from the Infineon CoolSiC™ 62 mm C-Series, utilizing Silicon Carbide technology. It features a drain-source voltage (VDSS) of 2000 V and a continuous DC drain current (IDDC) of 280 A at Tj = 175 °C. The on-state resistance (RDS(on)) is typically 3.5 mΩ at Tvj = 25 °C. The module provides low switching losses with turn-on energy (Eon) of 45.5 mJ and turn-off energy (Eoff) of 23.7 mJ at 1200 V and 300 A. It includes an integrated body diode with a forward voltage (VSD) of 4.6 V at 300 A. Thermal resistance from junction to case (RthJC) is 0.119 K/W per switch.

Feature Summary

• High-voltage capability with 2000 V rating for robust operation in demanding power systems
• Low switching losses and high current density enabling efficient high-frequency designs
• Integrated body diode with optimized forward characteristics for improved circuit performance
• Industrial qualification compliant with IEC 60747, 60749, and 60068 standards

Applications

• Uninterruptible Power Supply (UPS) systems
• Solar photovoltaic inverters
• DC/DC converters
• High-frequency switching applications

Procurement Notes

Verify the exact ordering suffix against official documentation to confirm specific packaging or variant details. Ensure compatibility with existing thermal interface materials and mounting hardware specifications. Confirm that the industrial qualification meets the specific reliability requirements of the target application environment before finalizing procurement.

Selection Notes

Select this module for applications requiring high voltage isolation and low conduction losses. Consider the thermal resistance values when designing heatsinking solutions. Verify gate drive voltage levels against the recommended operating range to optimize switching performance and minimize losses. Ensure the layout minimizes stray inductance to leverage the module's fast switching capabilities effectively.

Part Context

This component belongs to the Infineon CoolSiC™ 62 mm C-Series, designed for high-efficiency power conversion. It utilizes advanced Silicon Carbide trench MOSFET technology to achieve superior performance compared to traditional silicon devices. The series targets modern power electronics demanding higher power density and reduced system size.

Replacement Considerations

Direct replacements must match the 2000 V rating, 62 mm package footprint, and electrical characteristics. Verify pinout compatibility and thermal interface requirements. Consult official substitution lists for equivalent modules within the same product family.